MW plasma-enchanced CVD diamond system with 2-inch reactor for deposition of high-purity poly-, mono- and nanocrystal diamond films as well as carbon nanotubes from gas mixture (4 channels). Used for diamond AFM probe manufacture (see scdprobes.com), no Boron doping used. Power: up to 6 kW at 2.45 GHz, gas flow: 0,1 to 60 L/h, main mixtures: ?2/??4, ?2/??4/?2, Ar/H2/CH4, doping: N2 (NV color centers). Controlled wafer temperature up to 1200 deg. Deposition speed: up to 6 um/hr. Visual control, water cooling, automated control.
This equipment is located in EE
|Client type||End User|
|On Kitmondo since||2017|
|Number of listings||1|
|Last activity||Dec. 1, 2017|