Used LAM RESEARCH

Listing description

LAM 9600 WITH ENDPOINT DETECTION FROM LAM
MANUFACTURER: LAM RESEARCH
Model: 9600

Description:
The Lam 9600 is intended to etch aluminum metal and TiW layers with highly vertical sidewalls suitable for 0.35 um line width. The plasma is a medium-high density transformer coupled plasma, similar to ICP sources, allowing separate control of coil (top electrode} power and platen (lower electrode) power. In the chamber the wafers are mechanically clamped to a water cooled platen and He backside gas
provides coupling. C12/BC13 chemistry is used for Al and SF6 for TiW layers. The TiW etching and Cl-passivation step (also using SF6} may be done in the exit lock or in the main chamber. Cl-chemistry is expected to be effective on AI203 layers as well as silicon trenches with minimum undercut.

Key Features and Accessories:
Process gases: CI2, BCI3, HBr, SF6, CF4, Ar, N2, 02, He. Process pressure 0-100 mTorr, top electrode power 0 - 125OW, lower electrode power 0- 1200W. Process temperature 55°C. Adjustable monochromator is used for endpoint detection. It is equipped with a decoupled source quartz (DSQ) strip module to remove (strip) the photoresist from the wafers. The DSQ process drastically reduces the probability of particle contamination and increases the efficiency of the strip process.

Key Specifications:

Standard recipe600/601 for AI etching:

Etch rate: 800 nm/min,

Photoresist etch rate:400nm/min,

Standard recipe 640 for AI203 etching:

Etch rate: 100-120nm/min

Substrate size:

150 mm diameter

Allowed Materials:

AI, AI203, Ti02, poly Si, Nb and a variety of nitrides may be etched using CI-chemistry

Forbidden Materials:

Non IC-compatible materials

Includes: (1) Lam Model #9600's 4400

For sale: Lam Model #9600's 4400. Selling "as is, where is." We do not have the ability to test all equipment. This system was de-installed in working, operational condition.

This equipment is located in US